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Advance Technical Information
LinearL2 TM Power
MOSFET w/extended
FBSOA
IXTH75N10L2
IXTT75N10L2
D
O D
V DSS
I D25
R DS(on)
= 100V
= 75A
≤ 21m Ω
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
G
O
R Gi
w w
O
TO-247 (IXTH)
S
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
100
100
V
V
G
D
S
D (Tab)
V GSS
Continuous
± 20
V
V GSM
I D25
Transient
T C = 25 ° C
± 30
75
V
A
TO-268 (IXTT)
I DM
I A
E AS
P D
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
225
75
2.5
400
A
A
J
W
G
S
D (Tab)
T J
T JM
T stg
T L
T SOLD
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
-55 to +150
+150
-55 to +150
300
260
° C
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
M d
Weight
Mounting Torque (TO-247)
TO-247
TO-268
1.13/10
6.0
4.0
Nm/lb.in.
g
g
Features
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Integrated Gate Resistor for Easy
Paralleling
Guaranteed FBSOA at 75 ° C
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Advantages
BV DSS
V GS(th)
I GSS
I DSS
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
100
2.5
4.5
± 100
5
50
V
V
nA
μ A
μ A
Easy to Mount
Space Savings
High Power Density
Applications
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
21 m Ω
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
? 2009 IXYS CORPORATION, All Rights Reserved
DS100200(9/09)
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